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d a t a sh eet product speci?cation 1996 oct 10 discrete semiconductors BLV33F vhf linear power transistor
1996 oct 10 2 philips semiconductors product speci?cation vhf linear power transistor BLV33F features internally matched input for wideband operation and high power gain diffused emitter ballasting resistors for an optimum temperature profile gold metallization ensures excellent reliability. applications primarily intended for use in linear vhf amplifiers for television transmitters and transposers. description npn silicon planar epitaxial transistor encapsulated in a 1 2 6 lead sot119a capstan package with ceramic cap. all leads are isolated from the flange. pinning - sot119a pin symbol description 1 e emitter 2 e emitter 3 b base 4 c collector 5 e emitter 6 e emitter fig.1 simplified outline and symbol. handbook, halfpage mam269 2 4 6 5 3 1 e c b quick reference data rf performance in a common emitter push-pull test circuit. notes 1. three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level. 2. television service (negative modulation, c.c.i.r. system). mode of operation f vision (mhz) v ce (v) i c , i c(zs) (a) t h ( c) d im (1) (db) p o sync (1) (w) g p (db) sync compr. (2) sync in/sync out (%) cw, class-a 224.25 25 3.2 70 - 55 >13 >13.5 25 - 55 typ. 19 typ. 14.8 cw, class-ab 224.25 28 0.2 70 - typ. 85 typ. 10.5 30/25 warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo disc is not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste.
1996 oct 10 3 philips semiconductors product speci?cation vhf linear power transistor BLV33F limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics symbol parameter conditions min. max. unit v cesm collector-emitter voltage v be =0 - 65 v v ceo collector-emitter voltage open base - 33 v v ebo emitter-base voltage open collector - 4v i c collector current (dc) - 12.5 a i c(av) average collector current - 12.5 a i cm peak collector current f > 1 mhz - 20 a p tot total power dissipation (dc) t mb =25 c - 133 w p rf rf power dissipation f > 1 mhz; t mb =25 c - 162 w t stg storage temperature - 65 +150 c t j operating junction temperature - 200 c symbol parameter conditions value unit r th j-mb(dc) thermal resistance from junction to mounting base (dc dissipation) p diss =80w; t mb =82 c; t h =70 c 1.43 k/w r th j-mb(rf) thermal resistance from junction to mounting base (rf dissipation) p diss =80w; t mb =82 c; t h =70 c 1.17 k/w r th mb-h thermal resistance from mounting base to heatsink p diss =80w; t mb =82 c; t h =70 c 0.2 k/w fig.2 dc soar. (1) t mb =25 c. (2) t h =70 c. (3) second breakdown limit (independent of temperature). handbook, halfpage mgg132 10 2 10 1 11010 2 v ce (v) i c (a) (1) (2) (3) fig.3 power derating curves. (1) continuous dc (including rf class-a) operation. (2) continuous rf operation. handbook, halfpage 200 150 50 100 mgg133 0 100 50 p tot (w) t h ( c) (2) (1)
1996 oct 10 4 philips semiconductors product speci?cation vhf linear power transistor BLV33F example nominal class-a operation (without rf signal): v ce = 25 v; i c = 3.2 a; t h =70 c. figure 4 shows: r th j-h = max. 1.63 k/w t j = max. 200 c. typical device: r th j-h = typ.1.53 k/w t j = typ. 192 c. fig.4 maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. r th mb-h = 0.2 k/w. handbook, full pagewidth 150 2.0 r th j-h (k/w) 1.0 1.2 1.4 1.6 0 p tot (w) mgg144 1.8 100 50 t h = 120 c 100 c 80 c 60 c 40 c 20 c 0 c 75 c 100 c 125 c 150 c 175 c t j = 200 c
1996 oct 10 5 philips semiconductors product speci?cation vhf linear power transistor BLV33F characteristics t j =25 c; unless otherwise speci?ed. notes 1. measured under pulse conditions: t p 300 m s; d 0.02. 2. measured under pulse conditions: t p 50 m s; d 0.01. symbol parameter conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage v be = 0; i c =25ma 65 -- v v (br)ceo collector-emitter breakdown voltage open base; i c = 100 ma 33 -- v v (br)ebo emitter-base breakdown voltage open collector; i e =10ma 4 -- v i ces collector cut-off current v be = 0; v ce =30v -- 1ma h fe dc current gain v ce =25v; i c = 3 a; note 1 15 50 100 v cesat collector-emitter saturation voltage i c = 6 a; i b = 0.6 a; note 1 - 0.75 - v f t transition frequency v cb =25v; i e = - 3a; f = 100 mhz; note 2 - 680 - mhz v cb =25v; i e = - 6a; f = 100 mhz; note 2 - 750 - mhz c c collector capacitance v cb =25v; i e =i e = 0; f = 1 mhz - 155 - pf c re feedback capacitance i c = 50 ma; v ce =25v; f=1mhz - 88 - pf c cf collector-?ange capacitance - 3 - pf
1996 oct 10 6 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.5 dc current gain as a function of collector current; typical values. t j =25 c. (1) v ce =25v. (2) v ce =5v. handbook, halfpage 0 05 15 75 25 50 mgg130 10 i c (a) h fe (1) (2) fig.6 collector capacitance as a function of collector-base voltage; typical values. i e =i e = 0; f = 1 mhz; t j =25 c. handbook, halfpage 02040 600 200 0 400 mgg129 v cb (v) c c (pf) fig.7 transition frequency as a function of emitter current; typical values. v cb = 25 v; f = 100 mhz; t j =25 c. handbook, halfpage - 0 - 5 - 15 1000 0 mgg131 - 10 200 400 600 800 i e (a) f t (mhz) fig.8 collector current as a function of base-emitter voltage; typical values. v ce =25v. (1) t h =70 c. (2) t h =25 c. handbook, halfpage 2 0.5 1 1.5 10 1 10 - 1 mgg118 v be (v) i c (a) (1) (2)
1996 oct 10 7 philips semiconductors product speci?cation vhf linear power transistor BLV33F application information rf performance in vhf class-a operation (linear power ampli?er) note 1. three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level. mode of operation f vision (mhz) v ce (v) i c (a) t h ( c) d im (1) (db) p o sync (1) (w) g p (db) cw, class-a 224.25 25 3.2 70 - 55 >13 >13.5 70 - 55 typ. 14.5 typ. 14.5 70 - 52 typ. 22 typ. 14.5 25 - 55 typ. 19 typ. 14.8 fig.9 class-a test circuit at f vision = 224.25 mhz. handbook, full pagewidth mgg146 50 w input c1 c2 l1 c3 c4 l2 c7 c8 c6 c5 + v bb 50 w output c15 c14 l6 c11 c12 l4 + v cc c9 r1 c10 d.u.t. l3 l5 c13
1996 oct 10 8 philips semiconductors product speci?cation vhf linear power transistor BLV33F list of components used in test circuit (see figs 9 and 10) . notes 1. american technical ceramics type 100b or capacitor of same quality. 2. the striplines are on a double cu-clad printed-circuit board, with epoxy fibre-glass dielectric ( e r = 4.5); thickness 1 16 ". component description value dimensions catalogue no. c1, c15 multilayer ceramic chip capacitor; note 1 560 pf, 500 v c2, c4, c12, c14 ?lm dielectric trimmer 4 to 40 pf 2222 809 08002 c3 multilayer ceramic chip capacitor; note 1 10 pf, 500 v c5 multilayer ceramic chip capacitor 470 nf, 50 v 2222 856 48474 c6, c10 multilayer ceramic chip capacitor 680 pf, 50 v 2222 852 13681 c7, c8 multilayer ceramic chip capacitor; note 1 47 pf, 500 v placed 8 mm from transistor edge c9 polyester capacitor 330 nf c11 multilayer ceramic chip capacitor; note 1 68 pf, 500 v c13 solid tantalum capacitor 6.8 m f, 35 v l1 2 turns of 1.6 mm enamelled cu wire int. diameter 5 mm length 5 mm leads 2 3mm l2 microchoke 1 m h 4322 057 01080 l3 stripline; note 2 30 w 6mm 32.7 mm l4 2 turns of closely wound 1 mm enamelled cu wire int. diameter 5 mm leads 2 10 mm l5 stripline; note 2 30 w 6mm 24 mm l6 2 turns of 1.6 mm enamelled cu wire int. diameter 4 mm length 4.5 mm leads 2 3mm r1 carbon resistor 10 w
1996 oct 10 9 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.10 component layout and printed-circuit board for 224.25 mhz class-a test circuit. dimensions in mm. the circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as ea rth. earth connections are made by hollow rivets. additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. handbook, full pagewidth mgg149 115 50 + v bb + v cc c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 l1 l2 l3 l4 l5 l6 r1 rivets rivets rivets rivets 50 w input 50 w output
1996 oct 10 10 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.11 intermodulation distortion and power gain as a functions of output power. v ce = 25 v; i c = 3.2 a; f vision = 224.25 mhz. (1) t h =25 c. (2) t h =70 c. handbook, halfpage 10 20 30 40 - 44 - 64 - 48 mgg134 - 52 - 56 - 60 15 14 12 (2) (1) 13 11 g p (db) d im (db) p o sync (w) (1) (2) g p d im fig.12 cross-modulation distortion as a function of output power. v ce = 25 v; i c = 3.2 a; f vision = 224.25 mhz. (1) t h =25 c. (2) t h =70 c. handbook, halfpage 02040 30 10 0 20 mgg135 p o sync (w) d cm (%) (2) (1) three-tone test method (vision carrier - 8 db, sound carrier - 7 db, sideband signal - 16 db), zero db corresponds to peak sync level (see fig.11). intermodulation distortion of input signal - 70 db. two-tone test method (vision carrier 0 db, sound carrier - 7 db), zero db corresponds to peak sync level. cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0dbto - 20 db (see fig.12). ruggedness in class-a operation the BLV33F is capable of withstanding a full load mismatch corresponding to vswr = 50 : 1 through all phases up to 30 w (rms) or 40 w (pep) under the following conditions: v ce = 25 v; i c = 3.2 a; t h =70 c; f = 224.25 mhz; r th mb-h = 0.2 k/w.
1996 oct 10 11 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.13 input impedance as a function of frequency (series components); typical values. class-a operation; v ce = 25 v; i c = 3.2 a; t h =70 c. handbook, halfpage 50 250 1 - 1 0 mgg136 150 z i ( w ) x i f (mhz) r i fig.14 load impedance as a function of frequency (series components); typical values. class-a operation; v ce = 25 v; i c = 3.2 a; t h =70 c. handbook, halfpage 6 4 0 2 mgg137 50 250 150 z l ( w ) r l x l f (mhz) fig.15 power gain as a function of frequency; typical values. class-a operation; v ce = 25 v; i c = 3.2 a; t h =70 c. handbook, halfpage 30 20 0 10 mgg138 50 250 150 f (mhz) g p (db)
1996 oct 10 12 philips semiconductors product speci?cation vhf linear power transistor BLV33F rf performance in vhf class-ab operation (c.w.). note 1. gain compression point of 1 db is at typical 85 w (minimum 75 w). using a 3rd-order amplitude transfer characteristic, 1 db compression corresponds with 30 % sync input / 25 % sync output compression in television service (negative modulation, c.c.i.r. system). mode of operation f (mhz) v ce (v) i c , i c(zs) (a) t h ( c) p l (w) i c (a) h c (%) g p (db) (1) cw, class-ab 224.25 28 0.2 70 40 typ. 2.75 typ. 52 typ. 11.5 85 typ. 4.25 typ. 71 typ. 10.5 fig.16 class-ab test circuit at f vision = 224.25 mhz. handbook, full pagewidth mgg147 50 w c1 c3 c2 l1 c4 c5 l2 c8 c9 c7 c6 + v bb 50 w c18 c17 c16 l6 c13 c14 l4 c11 c12 + v cc c10 r1 c15 d.u.t. l3 l5
1996 oct 10 13 philips semiconductors product speci?cation vhf linear power transistor BLV33F list of components used in test circuit (see figs 16 and 17). notes 1. american technical ceramics type 100b or capacitor of same quality. 2. the striplines are on a double cu-clad printed-circuit board, with epoxy fibre-glass dielectric ( e r = 4.5); thickness 1 16 ". component description value dimensions catalogue no. c1, c18 multilayer ceramic chip capacitor; note 1 620 pf, 100 v c2 multilayer ceramic chip capacitor; note 1 27 pf, 500 v c3 ?lm dielectric trimmer 2 to 18 pf 2222 809 09003 c4 multilayer ceramic chip capacitor; note 1 30 pf, 500 v c5, c14 ?lm dielectric trimmer 4 to 40 pf 2222 809 08002 c6, c10 multilayer ceramic chip capacitor 470 nf, 50 v 2222 856 48474 c7, c15 multilayer ceramic chip capacitor 680 pf, 50 v 2222 852 13681 c8, c9 multilayer ceramic chip capacitor; note 1 68 pf, 500 v placed 6.4 mm from transistor edge c11, c12 multilayer ceramic chip capacitor; note 1 43 pf, 500 v placed 10 mm from transistor edge c13 multilayer ceramic chip capacitor; note 1 39 pf, 500 v c16 multilayer ceramic chip capacitor; note 1 3.3 pf, 500 v c17 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09001 l1 2 turns of 1.6 mm enamelled cu wire int. diameter 4.5 mm length 4 mm leads 2 4mm l2 3 turns of 1 mm closely wound enamelled cu wire int. diameter 5 mm leads 2 7mm l3 stripline; note 2 30 w 6mm 47.8 mm l4 2 turns of 1 mm closely wound enamelled cu wire int. diameter 5 mm leads 2 8mm l5 stripline; note 2 30 w 6mm 42.9 mm l6 2 turns of 1.6 mm enamelled cu wire int. diameter 4 mm length 4 mm leads 2 3mm r1 carbon resistor 10 w
1996 oct 10 14 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.17 component layout and printed-circuit board for 224.25 mhz class-ab test circuit. dimensions in mm. the circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as ea rth. earth connections are made by hollow rivets. additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. handbook, full pagewidth mgg151 c1 c2 c3 c4 l1 l3 l5 l6 l2 c5 c8 c9 c6 c7 c15 c11 c13 r1 c17 c18 c16 c12 l4 c14 c10 + v bb + v cc rivets 150 57 rivets rivets rivets 50 w input 50 w output
1996 oct 10 15 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.18 load power as a function of source power; typical values. v ce = 28 v; i c(zs) = 0.2 a; t h =70 c; f vision = 224.25 mhz. handbook, halfpage 024 8 100 0 80 mgg139 6 60 40 20 p s (w) p l (w) fig.19 power gain and efficiency as functions of load power; typical values. v ce = 28 v; i c(zs) = 0.2 a; t h =70 c; f vision = 224.25 mhz. handbook, halfpage 0 100 15 5 10 mgg140 50 g p (db) g p p l (w) 75 25 50 h c (%) h c ruggedness in class-ab operation the BLV33F is capable of withstanding a full load mismatch corresponding to vswr 2 through all phases) up to 60 w (rms) and 85 w (pep) under the following conditions:v ce = 28 v; t h =70 c; f = 224.25 mhz; r th mb-h = 0.2 k/w.
1996 oct 10 16 philips semiconductors product speci?cation vhf linear power transistor BLV33F fig.20 input impedance as a function of frequency (series components); typical values. class-ab operation; v ce = 28 v; p l = 80 w (pep); t h =70 c. handbook, halfpage 50 250 1 - 1 0 mgg141 150 z i ( w ) x i f (mhz) r i fig.21 load impedance as a function of frequency (series components); typical values. class-ab operation; v ce = 28 v; p l = 80 w (pep); t h =70 c. handbook, halfpage 4 0 2 mgg142 50 250 150 z l ( w ) r l x l f (mhz) fig.22 power gain as a function of frequency; typical values. class-ab operation; v ce = 28 v; p l = 80 w (pep); t h =70 c. handbook, halfpage 50 250 20 0 10 mgg143 150 g p (db) f (mhz)
1996 oct 10 17 philips semiconductors product speci?cation vhf linear power transistor BLV33F package outline fig.23 sot119a. handbook, full pagewidth mbc877 0.14 13 max ceramic beo metal 18.42 25.2 max 12.2 4.50 4.05 7.5 max 2.5 1 3 56 4 2 5.5 5.0 6.48 12.96 3.35 3.04 (2x) 3.8 min 5.7 5.3 5.7 5.3 4 min 6.35 22 max dimensions in mm. torque on screw: min. 0.6 nm; max. 0.75 nm. recommended screw: cheese-head 4-40 unc/2a. heatsink compound must be applied sparingly and evenly distributed.
1996 oct 10 18 philips semiconductors product speci?cation vhf linear power transistor BLV33F definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
1996 oct 10 19 philips semiconductors product speci?cation vhf linear power transistor BLV33F notes
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